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| Type | Component | Percentage | Type | Component | Percentage | Component | Percentage |
| Percent impurities (rare earth metals)（%） | TREM | 99% | Percent impurities (non-rare earth metals)（%） | Fe | ≤0.04 | W | ≤0.05 |
| Gd/TREM | 99.9% | Si | ≤0.02 | Ta | ≤0.05 | ||
| Sm/TREM | ＜0.01 | Ca | ≤0.02 | Nb | ≤0.05 | ||
| Eu/TREM | ＜0.01 | Mg | ≤0.005 | Mo | ≤0.05 | ||
| Tb/TREM | ＜0.01 | Al | ≤0.02 | Ti | ≤0.05 | ||
| Dy/TREM | ＜0.01 | Cu | ≤0.01 | C | ≤0.03 | ||
| Y/TREM | ＜0.01 | Ni | ≤0.015 | O | ≤0.15 | ||
| All specifications listed above customizable according to customers' requirements | |||||||
| Introduction to target materials | ||||||
A target material, also known as a "target," is a material that is bombarded by high-energy particles. By using different target materials such as aluminum, copper, stainless steel, titanium, nickel, etc., different types of films can be obtained, such as superhard, wear-resistant, and corrosion-resistant alloy films. Typically, these films are formed by heating and evaporating in a vacuum. Thin films can be prepared through techniques such as magnetron sputtering, electron beam evaporation, and laser ablation. | ||||||
| Requirements for high-quality target materials | ||||||
| 1.High purity. Purity of target materials affects the uniformity of the thin film. | ||||||
2.High density. High-density target materials have advantages such as good conductivity, good thermal conductivity, and high strength. Using of high-density target materials for coating contributes to reduced sputtering power, high film deposition rate, lower cracking rate, and longer service life. Additionally, the sputtered thin films exhibit low resistivity and high transmittance. | ||||||
| 3.Uniform composition and microstructure. Uniform composition of the target material is a crucial prerequisite for stable coating quality. | ||||||
| 4.Fine grain size. The finer the grain size of the target, the more uniform the thickness distribution of the sputtered thin film, and the faster the sputtering rate. | ||||||
| Classification of target materials | ||||||
| Based on chemical composition | （1）Metal target materials (pure metals such as aluminum, titanium, copper, tantalum, etc.) | |||||
| （2）Alloy target materials (nickel-chromium alloys, nickel-cobalt alloys, etc.) | ||||||
| （3）Ceramic compound target materials (oxides, silicides, carbides, sulfides, etc.) | ||||||
| Based on shape | Rectangular targets, circular targets, cylindrical targets, hollow rotating tube targets, and irregular-shaped targets. | |||||
| Based on applications | （1）Semiconductor wafer targets | |||||
| （2）Flat panel display targets | ||||||
| （3）Solar cell targets | ||||||
| （4）Information storage targets | ||||||
| （5）Electronic device targets | ||||||
| （6）Other targets | ||||||
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